A multiscale computational framework for coupling the multiple length scales in chemical vapor deposition (CVD) processes is implemented for studying the effect of the prevailing conditions inside a CVD reactor (macro-scale) on the film growth on a wafer with predefined topography (micro-scale). A multi-parallel method is proposed for accelerating the computations. It combines domain decomposition methods for the macro-scale (reactor scale) model, which is based on partial differential equations (PDEs), and a synchronous master-worker scheme for the parallel computation of the boundary conditions (BCs) for the PDEs; BCs are coming from the micro-scale model describing film growth on the predefined topography.
https://www.sciencedirect.com/science/article/pii/S1877750315300132